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50ohm 10w DC 30GHz BeO AlN Al2O3 Electrode Resistance 0.5*1mm

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50ohm 10w DC 30GHz BeO AlN Al2O3 Electrode Resistance 0.5*1mm

Brand Name : YLT

Model Number : chip

Place of Origin : China

Price : Negotiable

Payment Terms : T/T, L/C, Western Union, MoneyGram, Paypal

Delivery Time : 5-8 work days

MOQ : 100PCS

Supply Ability : 13Million PCS for RF Resistor, 7Million PCS for RF Attenuator

Packaging Details : Inside Box + Outside Carton Plus Pallet or Wooden Case if Necessary

Standard Resistance : 50Ω

Substrate Material : BeO、 AlN 、Al2O3

Resistance Tolerance : ±5%（default）;±2%;±1%

Power Rating : 1W

Frequency : DC-30GHz

Temperature Coefficient : ≤ 150ppm/℃

Temperature Range : -55～+150℃

VSWR : ≤1.25:1（DC-28GHz） ≤1.30:1（DC-30GHz）

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electrode resistance 50Ω 10w DC- 30 GHz BeO AlN Al2O3 0.5 * 1

额定功率	频率范围	最大驻波比	尺寸						产品型号
Power Rating	Frequency	VSWR	Dimensions(mm)						Model
(W)	(GHz)	(Max)	W	L	H	A	B	C
1	DC-30	1.30	0.5	1	0.25	N/A	N/A	N/A	RFR50N-1CT24801B
3	DC-30	1.50	1.27	2.54	0.6	1.54	0.5	0.6	RFR50-3CT43702F
5	DC-6	1.25	1.27	2.54	0.6	1.54	0.4	0.6	RFR50N-5CT27001B
12	DC-6	1.20	1.5	3	0.38	N/A	N/A	N/A	RFR50N-12CT15803B
5	DC-12	1.35	2.5	3	0.6	N/A	N/A	N/A	RFR50-5CT0214B
25	DC-6	1.20	2.5	5	1	N/A	N/A	N/A	RFR50N-25CT0337B
150	DC-4	1.20	6.35	6.35	1.5	1.27	0.76	N/A	RFR50N-150CT4803B

(Standard Resistance):50Ω
(Substrate Material):BeO, AlN,Al2O3
(Resistance Tolerance):± 5%(default)；±2%；±1%
(Power Rating):5～500W
(Temperature Range):-55～+150℃
(Temperature Coefficient):≤ 150ppm/℃
(RoHS Compliant)

(We can provide the customized product according to the customers’ requirement, such as Resistance and Configuration. )

50ohm 10w DC 30GHz BeO AlN Al2O3 Electrode Resistance 0.5*1mm

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50ohm 10w DC 30GHz BeO AlN Al2O3 Electrode Resistance 0.5*1mm

50ohm 10w DC 30GHz BeO AlN Al2O3 Electrode Resistance 0.5*1mm

BeO AlN Al2O3 Electrode Resistance

DC 30GHz Electrode Resistance 0.5*1mm

50ohm 10w Chip Termination

50ohm 10w DC 30GHz BeO AlN Al2O3 Electrode Resistance 0.5*1mm Images